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SI3457BDV-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 3.7A 6-TSOP
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 1.14W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.14W
Turn On Delay Time 7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 54m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) -3.7A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.054Ohm
Drain to Source Breakdown Voltage 30V
Nominal Vgs -3 V

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