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SI4362BDY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 29A 8-SOIC
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Inventory: 1816
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.070795
≥1 USD $0.070795
≥10 USD $0.068713
≥100 USD $0.066631
≥500 USD $0.064028

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 3W Ta 6.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 19.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 15V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 19.8A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 29A
Drain-source On Resistance-Max 0.0046Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 60A

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