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SI2303BDS-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 1.49A SOT23-3
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Inventory: 9100
Minimum: 1
Total Price: USD $1.02
Unit Price: USD $1.016453
≥1 USD $1.016453
≥10 USD $0.83391
≥100 USD $0.807975
≥500 USD $0.78204
≥1000 USD $0.756105

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 55 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.49A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) -1.49A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage 30V
Nominal Vgs -3 V

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Alternative Model

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