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SI4682DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V 16A 4.45W 9.4mohm @ 10V
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 4.45W Tc
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1595pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.595nF
Drain to Source Resistance 9.4mOhm
Rds On Max 9.4 mΩ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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