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SI4354DY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 9.5A 8-SOIC
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Inventory: 2657
Minimum: 1
Total Price: USD $0.06
Unit Price: USD $0.062617
≥1 USD $0.062617
≥10 USD $0.060775
≥100 USD $0.058934
≥500 USD $0.056631

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.5m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.5A Ta
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 4.5V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 9.5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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