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SI4862DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 16V 17A 8-SOIC
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Technical Details

Supply Chain

Factory Lead Time 32 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 42 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 25A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 17A Ta
Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V
Rise Time 38ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.0033Ohm
Drain to Source Breakdown Voltage 16V

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