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SI5441DC-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 3.9A 1206-8
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Supplier Device Package 1206-8 ChipFET?

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Power Dissipation 1.3W
Turn On Delay Time 20 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 55mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.9A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Drain to Source Resistance 55mOhm
Rds On Max 55 mΩ

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