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SI5461EDC-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 4.5A CHIPFET
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Inventory: 3028
Minimum: 1
Total Price: USD $11.64
Unit Price: USD $11.639828
≥1 USD $11.639828
≥10 USD $9.551063
≥100 USD $9.25281
≥500 USD $8.954558
≥1000 USD $8.655308

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 45mOhm
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 2.5 μs
FET Type P-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 4.5 μs
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 4.5 μs
Turn-Off Delay Time 27 μs
Continuous Drain Current (ID) -6.2A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4.5A
Drain to Source Breakdown Voltage -20V

Dimensions

Height 1.0922mm
Length 3.0988mm
Width 1.7018mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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