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SI7380ADP-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V 40A 83W 3.0mohm @ 10V
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Inventory: 27408
Minimum: 1
Total Price: USD $1.45
Unit Price: USD $1.45236
≥1 USD $1.45236
≥10 USD $1.192013
≥100 USD $1.154108
≥500 USD $1.1172
≥1000 USD $1.080293

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Dimensions

Height 1.04mm
Length 4.9mm
Width 5.89mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 3mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.4W Ta 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7785pF @ 15V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 155 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 70A
Nominal Vgs 600 mV

Alternative Model

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