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SI7404DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V 13.3A 3.8W 13mohm @ 10V
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Inventory: 10031
Minimum: 1
Total Price: USD $7.59
Unit Price: USD $7.590975
≥1 USD $7.590975
≥10 USD $6.22839
≥100 USD $6.033878
≥500 USD $5.839365
≥1000 USD $5.644853

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Case Code (Metric) 1212
Number of Elements 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 27 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 13.3A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.5A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Rise Time 39ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 8.5A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 12V
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 30V

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