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SI4829DY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 2A 8-SOIC
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Inventory: 27026
Minimum: 1
Total Price: USD $2.85
Unit Price: USD $2.85285
≥1 USD $2.85285
≥10 USD $2.341133
≥100 USD $2.268315
≥500 USD $2.1945
≥1000 USD $2.121683

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series LITTLE FOOT?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta 3.1W Tc
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 215m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 45ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.215Ohm
DS Breakdown Voltage-Min 20V
FET Feature Schottky Diode (Isolated)

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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