Packaging Cut Tape (CT)
Published 2011
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.8W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 2.8W
Turn On Delay Time 11 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10mOhm @ 11A, 20V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1543pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta 24A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) -11A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Input Capacitance 1.543nF
Recovery Time 96 ns
Drain to Source Resistance 14.6mOhm
Rds On Max 10 mΩ
Nominal Vgs -1.8 V