Packaging Cut Tape (CT)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.2MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 156W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 1.1V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 10890pF @ 10V
Current - Continuous Drain (Id) @ 25°C 49A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 4.5V
Rise Time 74ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 160 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 10.89nF
Recovery Time 130 ns
Drain to Source Resistance 1.2mOhm
Rds On Max 950 μΩ
Nominal Vgs 800 mV