Packaging Cut Tape (CT)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation 156W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 29A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Rise Time 54ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 40V
Input Capacitance 4.73nF
Recovery Time 38 ns
Drain to Source Resistance 2.7mOhm
Rds On Max 2.4 mΩ
Nominal Vgs 1 V