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IRFH5207TR2PBF

Infineon Technologies
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 75V 5X6 PQFN
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)

Technical

Packaging Cut Tape (CT)
Published 2007
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 7.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.6mOhm @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2474pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Ta 71A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 75V
Fall Time (Typ) 7.1 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 71A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Input Capacitance 2.474nF
Recovery Time 39 ns
Drain to Source Resistance 9.6mOhm
Rds On Max 9.6 mΩ
Nominal Vgs 2 V

Dimensions

Height 838.2μm
Length 5.9944mm
Width 5mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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