Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.3W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 6.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.6m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1410pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta 69A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.7 ns
Turn-Off Delay Time 8.4 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 69A
Drain-source On Resistance-Max 0.0056Ohm
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 65 mJ