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IRF6706S2TRPBF

Infineon Technologies
RoHS
/
Package DirectFET? Isometric S1
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V DIRECTFET S1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric S1
Number of Pins 5
Supplier Device Package DIRECTFET S1

Dimensions

Height 558.8μm
Length 4.826mm
Width 3.95mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.8mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.8W Ta 26W Tc
Power Dissipation 26W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1810pF @ 13V
Current - Continuous Drain (Id) @ 25°C 17A Ta 63A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 20ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.2 ns
Turn-Off Delay Time 9.9 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Input Capacitance 1.81nF
Drain to Source Resistance 6.5mOhm
Rds On Max 3.8 mΩ

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