Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 21 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2590pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 79 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 145 ns
Turn-Off Delay Time 185 ns
Continuous Drain Current (ID) -15A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0072Ohm
Drain to Source Breakdown Voltage -30V
Recovery Time 57 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1.8 V