Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 63W Tc
Power Dissipation 63W
Turn On Delay Time 9.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 13V
Current - Continuous Drain (Id) @ 25°C 81A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 46ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 81A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Input Capacitance 1.47nF
Recovery Time 29 ns
Drain to Source Resistance 8.5mOhm
Rds On Max 5.7 mΩ
Nominal Vgs 1.8 V