Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2005
Series HEXFET?
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Silver/Nickel (Ag/Ni)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XBCC-N3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 10.3A, 10V
Vgs(th) (Max) @ Id 4.8V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.3A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 10.3A
Drain-source On Resistance-Max 0.013Ohm
Pulsed Drain Current-Max (IDM) 82A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 220 mJ