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IRF6720S2TRPBF

Infineon Technologies
RoHS
/
Package DirectFET? Isometric S1
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 11A DIRECTFET-S1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric S1
Number of Pins 4
Supplier Device Package DIRECTFET S1

Dimensions

Height 558.8μm
Length 4.826mm
Width 3.95mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.7W Ta 17W Tc
Power Dissipation 17W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.14nF
Drain to Source Resistance 12.8mOhm
Rds On Max 8 mΩ

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