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IRF6794MTRPBF
Infineon TechnologiesRoHS
/
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V DIRECTFET MX
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 5
Supplier Device Package DIRECTFET? MX
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Dimensions
Height 506μm
Length 6.35mm
Width 5.05mm
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.8W Ta 100W Tc
Power Dissipation 100W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4420pF @ 13V
Current - Continuous Drain (Id) @ 25°C 32A Ta 200A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
Rise Time 25ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.6 ns
Turn-Off Delay Time 9.7 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Input Capacitance 4.42nF
FET Feature Schottky Diode (Body)
Drain to Source Resistance 3mOhm
Rds On Max 1.7 mΩ
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