Packaging Cut Tape (CT)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 6.3ns
Drain to Source Voltage (Vdss) 250V
Fall Time (Typ) 6.1 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 32A
Threshold Voltage 20V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Input Capacitance 2.15nF
Recovery Time 83 ns
Drain to Source Resistance 100mOhm
Rds On Max 100 mΩ
Nominal Vgs 20 V