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NTD5865NL-1G

ON Semiconductor
RoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 46A IPAK
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)

Physical

Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 16MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 4
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 71W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 52W
Case Connection DRAIN
Turn On Delay Time 8.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 12.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 36 mJ

Dimensions

Height 7.62mm
Length 6.73mm
Width 2.38mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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