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SI1056X-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V SC-89-6
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Inventory: 35020
Minimum: 1
Total Price: USD $5.81
Unit Price: USD $5.806448
≥1 USD $5.806448
≥10 USD $4.765058
≥100 USD $4.615433
≥500 USD $4.466805
≥1000 USD $4.318178

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 236mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 89m Ω @ 1.32A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 5V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 1.32A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.089Ohm
Drain to Source Breakdown Voltage 20V
Nominal Vgs 950 mV

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