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SI4004DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 12A 8-SOIC
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Inventory: 4238
Minimum: 1
Total Price: USD $1.69
Unit Price: USD $1.69176
≥1 USD $1.69176
≥10 USD $1.38852
≥100 USD $1.34463
≥500 USD $1.301738
≥1000 USD $1.257848

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Packaging Cut Tape (CT)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 5W
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.8m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 12ns
Fall Time (Typ) 9 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V

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