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SI4104DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 100V 4.6A 5.0W 105mohm @ 10V
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Inventory: 20047
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.093925
≥1 USD $0.093925
≥10 USD $0.091163
≥100 USD $0.0884
≥500 USD $0.084947

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.5W Ta 5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 446pF @ 50V
Current - Continuous Drain (Id) @ 25°C 4.6A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 3.2A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.6A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 4 mJ

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

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