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SI4102DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Single N-Channel 100 V 2.4 W 3.8 A 0.158 O Surface Mount Power Mosfet - SOIC-8
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Inventory: 15224
Minimum: 1
Total Price: USD $0.37
Unit Price: USD $0.365085
≥1 USD $0.365085
≥10 USD $0.29925
≥100 USD $0.290273
≥500 USD $0.281295
≥1000 USD $0.27132

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta 4.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.8W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 158m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 370pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.8A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 2.7A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.0027A
Drain to Source Breakdown Voltage 100V

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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