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SI7703EDN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V
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Inventory: 21454
Minimum: 1
Total Price: USD $1.69
Unit Price: USD $1.69176
≥1 USD $1.69176
≥10 USD $1.38852
≥100 USD $1.34463
≥500 USD $1.301738
≥1000 USD $1.257848

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.3W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 48m Ω @ 6.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 800μA
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) -6.3A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4.3A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 20A
FET Feature Schottky Diode (Isolated)

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Alternative Model

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