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SIE862DF-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 10-PolarPAK? (U)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 50A POLARPAK
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Inventory: 3057
Minimum: 1
Total Price: USD $1.45
Unit Price: USD $1.45236
≥1 USD $1.45236
≥10 USD $1.192013
≥100 USD $1.154108
≥500 USD $1.1172
≥1000 USD $1.080293

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK? (U)
Number of Pins 10
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 10
JESD-30 Code R-PDSO-N4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 5.2W Ta 104W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.0038Ohm
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 80 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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