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SIJ484DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY SIJ484DP-T1-GE3 MOSFET Transistor, N Channel, 35 A, 30 V, 5200 ohm, 10 V, 1.2 V
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Inventory: 9963
Minimum: 1
Total Price: USD $6.61
Unit Price: USD $6.612428
≥1 USD $6.612428
≥10 USD $5.425403
≥100 USD $5.255828
≥500 USD $5.086253
≥1000 USD $4.916678

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation-Max 5W Ta 27.7W Tc
Power Dissipation 5W
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

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