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SIR406DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 25V 40A 48W 3.8mohm @ 10V
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Inventory: 175
Minimum: 1
Total Price: USD $0.73
Unit Price: USD $0.72618
≥1 USD $0.72618
≥10 USD $0.596505
≥100 USD $0.577553
≥500 USD $0.5586
≥1000 USD $0.540645

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 5W Ta 48W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2083pF @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 27A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 45 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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