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SUD50N10-18P-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 8.2A TO252
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Inventory: 125
Minimum: 1
Total Price: USD $1.02
Unit Price: USD $1.016453
≥1 USD $1.016453
≥10 USD $0.83391
≥100 USD $0.807975
≥500 USD $0.78204
≥1000 USD $0.756105

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 2
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 18.5MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Power Dissipation-Max 3W Ta 136.4W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 136.4W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 50V
Current - Continuous Drain (Id) @ 25°C 8.2A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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