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SQD35N05-26L-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK
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Inventory: 1834
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Total Price: USD $0.12
Unit Price: USD $0.120094
≥1 USD $0.120094
≥10 USD $0.116562
≥100 USD $0.113029
≥500 USD $0.108614

Technical Details

Physical

Contact Plating Tin
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package TO-252, (D-Pak)
Weight 1.437803g

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
Tolerance 1%
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Temperature Coefficient 50 ppm/°C
Resistance 2.26Ohm
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Composition Wirewound
Power Rating 3W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Power Dissipation 50W
Turn On Delay Time 5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1175pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Rise Time 18ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 1.175nF
Drain to Source Resistance 20mOhm
Rds On Max 20 mΩ

Dimensions

Diameter 4.75mm
Height 2.39mm
Length 6.73mm
Width 6.22mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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