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SUD50N04-16P-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 9.8A TO252
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Inventory: 2099
Minimum: 1
Total Price: USD $0.87
Unit Price: USD $0.871815
≥1 USD $0.871815
≥10 USD $0.715208
≥100 USD $0.693263
≥500 USD $0.67032
≥1000 USD $0.648375

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 1.437803g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 35.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1655pF @ 20V
Current - Continuous Drain (Id) @ 25°C 9.8A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 9.8A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 20 mJ

Dimensions

Height 2.39mm
Length 6.73mm
Width 6.22mm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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