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SI9424BDY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 5.6A 8SOIC
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Inventory: 3153
Minimum: 1
Total Price: USD $6.61
Unit Price: USD $6.608438
≥1 USD $6.608438
≥10 USD $5.42241
≥100 USD $5.252835
≥500 USD $5.08326
≥1000 USD $4.913685

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.25W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 30 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 7.1A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.6A Ta
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Rise Time 40ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±9V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) -7.1A
Threshold Voltage -450mV
Gate to Source Voltage (Vgs) 9V
Drain Current-Max (Abs) (ID) 5.6A
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage -20V

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