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SIB411DK-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SC-75-6L
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 9A PPAK SC75-6L
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-75-6L
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 66mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 156.25MHz
Time@Peak Reflow Temperature-Max (s) 40
Frequency Stability 25 ppm
Pin Count 6
JESD-30 Code S-XDSO-N3
Number of Elements 1
Power Dissipation-Max 2.4W Ta 13W Tc
Load Capacitance 15pF
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 66m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 8V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -9A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4.8A
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage 20V
Nominal Vgs -1 V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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