Packaging Cut Tape (CT)
Published 2012
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Resistance 12.8MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.2W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.2W
Turn On Delay Time 6.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.8mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 5.7 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 790pF
Recovery Time 18 ns
Drain to Source Resistance 12.8mOhm
Rds On Max 12.8 mΩ
Nominal Vgs 1.8 V