Packaging Cut Tape (CT)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 5MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2487pF @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Ta 82A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 7.1 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.487nF
Recovery Time 24 ns
Drain to Source Resistance 5mOhm
Rds On Max 5 mΩ
Nominal Vgs 1.8 V