Packaging Cut Tape (CT)
Published 2008
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.1MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 3180pF @ 10V
Current - Continuous Drain (Id) @ 25°C 27A Ta 120A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 27A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 3.18nF
Recovery Time 24 ns
Drain to Source Resistance 3.1mOhm
Rds On Max 3.1 mΩ
Nominal Vgs 1.8 V