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2SK4066-E

ON Semiconductor
RoHS
/
Package TO-220-3, Short Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 100A SMP
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3, Short Tab
Number of Pins 3

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.65W Ta 90W Tc
Element Configuration Single
Power Dissipation 1.65W
Turn On Delay Time 80 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 12500pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 630ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 750 ns
Turn-Off Delay Time 860 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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