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NP55N055SDG-E1-AY

Renesas Electronics America
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 55A TO-252
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

Technical

Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Configuration Single
Power Dissipation-Max 1.2W Ta 77W Tc
Power Dissipation 1.2W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.5m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 71 ns
Continuous Drain Current (ID) 55A
Gate to Source Voltage (Vgs) 20V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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