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TPC6010-H(TE85L,FM

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 6.1A VS6
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Inventory: 9056
Minimum: 1
Total Price: USD $0.2
Unit Price: USD $0.197505
≥1 USD $0.197505
≥10 USD $0.162593
≥100 USD $0.157605
≥500 USD $0.152618
≥1000 USD $0.14763

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSVI-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 700mW Ta
Power Dissipation 2.2W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 59m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.1A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 2.4ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.2 ns
Continuous Drain Current (ID) 6.1A
Gate to Source Voltage (Vgs) 20V

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