Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 390W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 21
JESD-30 Code R-XUFM-X21
Number of Elements 6
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 390W
Case Connection ISOLATED
Turn On Delay Time 21 ns
FET Type 6 N-Channel (3-Phase Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 38ns
Drain to Source Voltage (Vdss) 500V
Fall Time (Typ) 93 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 51A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.078Ohm
Pulsed Drain Current-Max (IDM) 204A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 3000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard