Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 250W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 40A, 20V
Vgs(th) (Max) @ Id 2.2V @ 2mA (Typ)
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 20V
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 55A
Drain-source On Resistance-Max 0.049Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)