Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2000
Series HiPerFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 1.5kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number VMM
Qualification Status Not Qualified
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Power - Max 1500W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.6m Ω @ 145A, 10V
Vgs(th) (Max) @ Id 4V @ 30mA
Input Capacitance (Ciss) (Max) @ Vds 40000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1440nC @ 10V
Drain to Source Voltage (Vdss) 300V
Continuous Drain Current (ID) 290A
Pulsed Drain Current-Max (IDM) 1160A
DS Breakdown Voltage-Min 300V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard