Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 125W
Number of Elements 1
Turn On Delay Time 12 ns
FET Type 4 N-Channel (Three Level Inverter)
Rds On (Max) @ Id, Vgs 98m Ω @ 20A, 20V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 20V
Rise Time 14ns
Drain to Source Voltage (Vdss) 1200V 1.2kV
Fall Time (Typ) 18 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 28A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)