Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1997
Series CoolMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Max Power Dissipation 625W
Number of Elements 3
Power - Max 625W
FET Type 6 N-Channel (3-Phase Bridge)
Rds On (Max) @ Id, Vgs 21m Ω @ 88A, 10V
Vgs(th) (Max) @ Id 3.6V @ 6mA
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 580nC @ 10V
Drain to Source Voltage (Vdss) 600V
Continuous Drain Current (ID) 116A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard