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APTMC120AM16CD3AG

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package D-3 Module
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 1200V 131A D3
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Technical

Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 625W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 20m Ω @ 100A, 20V
Vgs(th) (Max) @ Id 2.2V @ 5mA (Typ)
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 131A Tc
Gate Charge (Qg) (Max) @ Vgs 246nC @ 20V
Rise Time 20ns
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 131A
FET Feature Silicon Carbide (SiC)

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D-3 Module

Compliance

RoHS Status RoHS Compliant

Alternative Model

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