Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 780W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
JESD-30 Code R-XUFM-X12
Number of Elements 4
Operating Mode ENHANCEMENT MODE
Power Dissipation 780W
Case Connection ISOLATED
Turn On Delay Time 18 ns
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 210m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 372nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 1000V 1kV
Fall Time (Typ) 40 ns
Turn-Off Delay Time 155 ns
Continuous Drain Current (ID) 43A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.21Ohm
Pulsed Drain Current-Max (IDM) 172A
DS Breakdown Voltage-Min 1000V
Avalanche Energy Rating (Eas) 3000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard